Circuit structure having islands between source and drain and circuit formed

ABSTRACT

A method of making a circuit structure includes growing a bulk layer over a substrate, and growing a donor-supply layer over the bulk layer. The method further includes depositing a doped layer over the donor-supply layer, and patterning the doped layer to form a plurality of islands. The method further includes forming a gate structure over the donor-supply layer, wherein the gate structure is partially over a largest island of the plurality of islands. The method further includes forming a drain over the donor-supply layer, wherein at least one island of the plurality of islands is between the gate structure and the drain.

PRIORITY CLAIM

The present application is a divisional application of U.S. applicationSer. No. 14/547,770, filed Nov. 19, 2014, now U.S. Pat. No. 9,385,225,which is a continuation of U.S. application Ser. No. 13/309,048, filedDec. 1, 2011, now U.S. Pat. No. 8,921,893, both of which areincorporated herein by reference in their entirety.

TECHNICAL FIELD

This disclosure relates generally to semiconductor circuit manufacturingprocesses and, more particularly, to a group-III group-V (III-V)compound semiconductor based transistor.

BACKGROUND

Group-III group-V compound semiconductors (often referred to as III-Vcompound semiconductors), such as gallium nitride (GaN) and its relatedalloys, have been under intense research in recent years due to theirpromising applications in power electronic and optoelectronic devices.The large band gap and high electron saturation velocity of many III-Vcompound semiconductors also make them excellent candidates forapplications in high temperature, high voltage, and high-speed powerelectronics. Particular examples of potential electronic devicesemploying III-V compound semiconductors include high electron mobilitytransistor (HEMT) and other heterojunction bipolar transistors.

During operation, a HEMT forms a large surface electric field around thegate edge, which affects the depletion region curve between the gatestructure and the drain. While large electric field is one of thebenefits of HEMT for use in power applications, the distribution of thedepletion region during operation can negatively affect the breakdownvoltage for the device. When negative bias is applied to the gate of theHEMT, depletion region curve is formed directly under the gate andcauses high surface electric field around the gate edge. The highelectric field concentration around the gate reduces breakdown voltagefor the device.

In order to improve breakdown voltage (i.e., to increase it), a metallicfield plate is sometimes added over or next to the gate structure overthe passivation layer between the gate structure and the drain. Thefield plate modulates the surface electric field distribution reducingthe peak electric field, and thus increases the breakdown voltage.However, new structures with high breakdown voltage for III-V compoundsemiconductor based transistors and methods for forming them continue tobe sought.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present disclosure, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1A is a cross sectional view of a high electron mobility transistor(HEMT) structure in accordance with various embodiments of the presentdisclosure.

FIG. 1B is a flow chart of a method of forming a HEMT structure inaccordance with certain embodiments according to FIG. 1A of the presentdisclosure.

FIGS. 2A, 2B, 2C, 2D, and 2E are top views of a HEMT structure inaccordance with various embodiments of the present disclosure.

FIGS. 3A, 3B, and 3C are cross-sectional views of a HEMT depletionregions under different operating conditions.

FIGS. 4A, 4B, and 4C are cross-sectional views of a HEMT depletionregions in accordance with various embodiments of the present disclosureunder different operating conditions.

FIG. 5 is a plot of simulated peak surface electric field as a functionof distance on the HEMT structures in accordance with variousembodiments of the present disclosure.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the present embodiments are discussed in detailbelow. It should be appreciated, however, that the present disclosureprovides many applicable inventive concepts that can be embodied in awide variety of specific contexts. The specific embodiments discussedare illustrative of specific ways to make and use the disclosedembodiments and do not limit the scope of the disclosure.

A novel structure for group-III to group-V (referred to as III-Vhereinafter) semiconductor based transistors and methods for forming thestructures are provided. Throughout the description, the term “III-Vcompound semiconductor” refers to compound semiconductor materialscomprising at least one group III element and one group-V element.

The term “III-N compound semiconductor” refers to a III-V compoundsemiconductor in which the group V element is nitrogen. Example stagesof manufacturing an illustrative embodiment of the present disclosureare discussed. Those skilled in the art will recognize that othermanufacturing steps may take place before or after the described stagesin order to produce a complete device. Other stages of manufacturingthat may substitute some of the example stages may be discussed. Thoseskilled in the art will recognize that other substitute stages orprocedures may be used. Throughout the various views and illustrativeembodiments of the present disclosure, like reference numbers are usedto designate like elements.

The present disclosure provides a structure and a method to form III-Vcompound semiconductor based transistors having high breakdown voltage.FIG. 1A shows an example power transistor device 100 according tovarious embodiments of the present disclosure. The power transistor 100may be a high-electron mobility transistor (HEMT). The HEMT includes asubstrate 101, a bulk layer GaN layer 109 over the substrate 101, anactive layer 111 over the bulk GaN layer 109, and source 115, drain 117,and gate 119 over the active layer 111. An interface of active layer 111and bulk GaN layer 109 is a high-electron mobility region 113, alsoknown as a channel layer. In a drift region 107 between the gate 119 andthe drain 117, a number of islands 103 and 105 are formed over theactive layer. Each of these transistor elements are discussed furtherbelow together with methods for forming them.

FIG. 1B shows a flowchart 150 of a method of making the power transistordevice 100 of FIG. 1A. In operation 151, a substrate 101 is provided, asshown in FIG. 1A. Although silicon wafers are used, other suitablesubstrates include silicon carbide and sapphire. A number of layers aregrown over the substrate 101 using an epitaxial process. The layers mayinclude a nucleation layer of aluminum nitride, a buffer, and a bulkgallium nitride layer 109 grown over the buffer layer. The bulk galliumnitride layer 109 is a channel layer for the power transistor device100.

The bulk layer of undoped gallium nitride 109 is epitaxially grown overthe substrate, which may include a buffer layer (not shown) in operation153 of FIG. 1B. The bulk layer of gallium nitride 109 does not includeany dopant, but may include contaminants or impurities that areincorporated in the film unintentionally. The bulk layer of galliumnitride may be referred to as unintentionally doped gallium nitride (UIDGaN) layer. The UID GaN layer is about 0.5 microns to about 5 micronthick. The bulk GaN layer is grown under high temperature conditions.The process may be metal organic CVD (MOCVD), metal organic vapor phaseepitaxy (MOVPE), plasma enhanced CVD (PECVD), remote plasma enhanced CVD(RP-CVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy(HVPE), chloride vapor-phase epitaxy (Cl-VPE), and liquid phase epitaxy(LPE). The metal organic vapor phase epitaxy (MOVPE) process usesgallium-containing precursor and nitrogen-containing precursor. Thegallium-containing precursor includes trimethylgallium (TMG),triethylgallium (TEG), or other suitable chemical. Thenitrogen-containing precursor includes ammonia (NH₃),trimethylalaluminum (TMA), phenyl hydrazine, or other suitable chemical.

FIG. 1A shows an active layer 111 on top of the bulk GaN layer 109. Theactive layer 111, also referred to as donor-supply layer, is grown onthe channel layer 109 in operation 155 of FIG. 1B. An interface isdefined between the channel layer 109 and the donor-supply layer 111. Acarrier channel 113 of two-dimensional electron gas (2-DEG) is locatedat the interface, which is discussed in further detail below. In atleast one embodiment, the donor-supply 111 refers to an aluminum galliumnitride (AlGaN) layer (also referred to as the AlGaN layer 111). TheAlGaN layer 111 has a formula of Al_(x)Ga_((1-x))N. It has a thicknessin a range from about 5 nanometers to about 50 nanometers, wherein xvaries between about between about 10% to 100%. In other embodiments,the donor-supply layer 111 may include an AlGaAs layer or AlInP layer.

The AlGaN layer 111 can be epitaxially grown on the GaN layer 109 inoperation 155 of FIG. 1B by MOVPE using an aluminum-containingprecursor, a gallium-containing precursor, and/or a nitrogen-containingprecursor. The aluminum-containing precursor includes Tri-MethylAluminumTMA, triethyl Aluminum (TEA), or other suitable chemical. Thegallium-containing precursor includes Trimethyl Gallium TMG, TriethylGallium TEG, or other suitable chemical. The nitrogen-containingprecursor includes ammonia, tertiarybutylamine (TBAm), phenyl hydrazine,or other suitable chemical.

Referring back to FIG. 1A, a band gap discontinuity exists between theAlGaN layer 111 and the GaN layer 109. The electrons from apiezoelectric effect in the AlGaN layer 111 drop into the GaN layer 109,creating a very thin layer 113 of highly mobile conducting electrons inthe GaN layer 109. This thin layer 113 is referred to as atwo-dimensional electron gas (2-DEG), forming a carrier channel (alsoreferred to as the carrier channel 113). The thin layer 113 of 2-DEG islocated at an interface of the AlGaN layer 111 and the GaN layer 109.Thus, the carrier channel has high electron mobility because the GaNlayer 109 is undoped or unintentionally doped, and the electrons canmove freely without collision or substantially reduced collision withthe impurities.

According to various embodiments of the present disclosure, a gatestructure 119 partially overlaps one or more islands 103 formed over theAlGaN layer 111 between the gate structure 119 and a drain 117 or atleast adjoins at least a portion of one of the islands. The regionbetween the gate structure 119 and the drain 117 is the drift region 107on which the islands 103 and 105 are formed. The islands 103 and 105 areformed before the gate structure 119 but may be formed before or after asource 115 and drain 117.

In certain embodiments, a portion of the gate structure 119 overlaps apart of the one or more islands 103, as shown in FIG. 1A. In otherembodiments, the gate structure 119 covers the entirety of the one ormore islands 103 while a portion of the bottom of the gate structure 119does not contact the one or more islands. In other words, the gatestructure 119, the one or more islands 103, or both can partiallyoverlap the other. In still other embodiments, the gate structure 119adjoins a portion of one or more of the islands without overlapping eachother.

According to certain embodiments, the islands 103 and 105 are p-typedoped islands. Referring to FIG. 1B, in operation 157 a p-type doped GaNfilm is grown epitaxially over the AlGaN layer 111. The islands may bep-type doped gallium nitride or aluminum gallium nitride islands. Thep-type doping may occur by adding a dopant during the epitaxial growthprocess. P-type dopant candidates include carbon, iron, magnesium,calcium, beryllium, and zinc. The p-type doping may also be performed byother processes such as ion implantation; however, care must be takennot to incorporate the dopant in underlying layers, which may adverselyaffect the electrical property of the transistor. The dopantconcentration may be about from 1E15/cm³ to 1E17/cm³.

In other examples, the islands 103 and 105 may also be deposited, forexample, using a metal chemical vapor deposition (MCVD) process or asputtering process, and defined on the AlGaN layer 111. The islands maybe p-type doped nickel oxide or zinc oxide. The p-type doping may occurby adding a dopant during the deposition process. P-type dopantcandidates include carbon, iron, magnesium, calcium, beryllium, andzinc. The p-type doping may also be performed by other processes such asion implantation; however, care must be taken not to incorporate thedopant in underlying layers, which may adversely affect the electricalproperty of the transistor. Note that while the dopant candidates may bethe same for the epitaxially grown islands and the deposited islands,but the chemicals used may be different. The dopant concentration may befrom about 1E15/cm³ to 1E17/cm³.

Referring to FIG. 1B, the p-type doped film is deposited in operation157. Thereafter, a photolithographic process is employed to protect theisland portions of the p-type doped film. The p-type doped film isetched into islands in operation 159. In at least one embodiment, aplasma etch process is used to removed unwanted portions of the p-typedoped film. In one example, the plasma etch process is a reactive ionetch process employing chlorine containing etchants. In someembodiments, care is taken to not overetch into the donor-supply layer111.

The light p-type doping of the islands creates p-n junctions at theAlGaN layer 111 surface. During operation, the p-n junctions modulatethe surface electric field and reduce effective peak electric field atthe gate edge. The lower peak electric field results in a higherbreakdown voltage.

According to some embodiments, the islands 103 and 105 are formed ofSchottky materials, such as titanium, tungsten, titanium nitride, ortitanium tungsten. Other Schottky materials may include nickel, gold, orcopper. These materials may be deposited using physical vapor deposition(PVD) processes such as sputtering or electron gun, or using MCVDprocesses. The materials may be deposited first and then unwanted partsare defined and etched away or are deposited over defined film such as aphotoresist and then unwanted parts lifted off with the defined film.

A thickness of the islands 103 and 105 may be about 3 nm to about 100nm. In some cases, the thickness of the islands 103 and 105 may be about10 nm or be about 20 nm. The thickness of the islands 103 and 105depends on the electrical properties and the physical dimensions of thesemiconductor structure 100. For example, thin islands 103 and 105 maybe used when the bulk gallium nitride layer 109 is thick and the driftregion 107 is very large as compared to the region between the gatestructure 119 and the source 115. In these circumstances, the breakdownvoltage is naturally high and little modulation of the surface electricfield may be sufficient for reaching a predetermined breakdown voltage.On the other hand, when the bulk gallium nitride layer 109 is thin orwhen the bulk layer is of a material with a low critical electricalfield (Ec) value, the island 103 and 105 may be thicker. Duringoperation when the drain is subjected to a high voltage, the depletionregion formed may extend past a thin gallium nitride layer 109 andinteract with the underlying substrate. Similar rationale applies whenthe distance between the gate structure 119 and the drain 117 is small.During operation when the drain is subjected to a high voltage, thedepletion region curve may extend past a short drift region 107. Thusthicker islands 103 and 105 may be used to effectively modulate thesurface electrical field. According to various embodiments, islandthickness between about 3 nm to 100 nm and a drift region that is atleast half the size of the device, i.e., half of the donor-supply layer,form a HEMT with good breakdown voltage at or over 600 volts.

The source 115, drain 117, and gate structures 119 are formed inoperation 161 of FIG. 1B. The source feature 115 and a drain feature 117are disposed on the AlGaN layer 111 and configured to electricallyconnect to the carrier channel 113. Each of the source feature 115 andthe drain feature 117 comprises a corresponding intermetallic compound.The intermetallic compound is at least partially embedded in the AlGaNlayer 111 and may be embedded in a top portion of the GaN layer 109. Inone example, the intermetallic compound comprises Al, Ti, or Cu. Inanother example, the intermetallic compound comprises AlN, TiN, Al₃Ti orAlTi₁N.

The intermetallic compound may be formed by constructing a patternedmetal layer in a recess of the AlGaN layer 111. Then, a thermalannealing process may be applied to the patterned metal layer such thatthe metal layer, the AlGaN layer 111 and the GaN layer 109 react to formthe intermetallic compound. The intermetallic compound contacts thecarrier channel 113 located at the interface of the AlGaN layer 111 andthe GaN layer 109. Due to the formation of the recess in AlGaN layer111, the metal elements in the intermetallic compound may diffuse deeperinto the AlGaN layer 111 and the GaN layer 109. The intermetalliccompound may improve electrical connection and form ohmic contactsbetween the source/drain features 115 or 117 and the carrier channel113. In one example, the intermetallic compound is formed in the recessof the AlGaN layer 111 thereby the intermetallic compound has a non-flattop surface. In another example, intermetallic compound overlies aportion of the AlGaN layer 111.

The semiconductor structure 100 also includes a gate structure 119disposed on the AlGaN layer 111 between the source 115 and drain 117features. The gate 119 includes a conductive material layer whichfunctions as the gate electrode configured for voltage bias andelectrical coupling with the carrier channel 113. In various examples,the conductive material layer may include a refractory metal or itscompounds, e.g., tungsten (W), titanium nitride (TiN) and tantalum (Ta).Other commonly used metals in the conductive material layer includenickel (Ni) and gold (Au). The gate structure may include one or manylayers.

FIGS. 2A to 2D are example top views of various islands in accordancewith various embodiments of the present disclosure. FIG. 2A shows atotal of four islands 203 and 205 in the drift region with island 203being partially covered by the gate 219. The edge of island 203 coveredby the gate structure 219 is shown as a dotted line. As shown in FIG.2A, three islands 205 are dispersed between the island 203 and drain217, although fewer or more islands may be used.

In FIG. 2A, the first island 203 that is partially under the gatestructure 219 is the largest island. Islands 205 have the same size.Each island has a width. Island 203 has a width 221. Islands 205 havewidths 223. The distance between island 203 and the adjacent island 205is distance 222. The distances between the islands 205 are distances224. Finally, a distance between the drain 217 and adjacent island 205is distance 225. Adequate distance 225 must be maintained to ensureisolation of the drain 217 from an adjacent island 205.

According to certain embodiments, a largest of the islands 203 and 205is partially disposed under the gate structure 119. While not requiredfor the present disclosure to reduce breakdown voltage of the transistor100, the island material has the largest effect to modulate surfaceelectric field at the gate edge. Thus, embodiments having larger islandsat least partially under the gate structure 119 results in greaterreductions of breakdown voltages.

In some embodiments, the islands 203 and 205 are the same sizes and maybe equally spaced. In some examples, the widths of adjacent island anddrift region 207 not occupied by an island may be between about 3:1 toabout 1:3. For example, a ratio of distance 221 to distance 222 may beabout 3:1, while a ratio of distance 222 to distance 223 may be about1:2. A ratio of distance 223 to distance 224 may be about 1:1.

In other embodiments, a sum of total island widths may be compared tothe total drift region 207 width. A total island width may be about 40%to about 75% of the total drift region 207 width. In other words a sumof widths 221 and 223 s may be compared to the total width of the driftregion 207.

In yet other embodiments, a total island area is compared to the driftregion area. In FIG. 2A, the features all have the same length so thatthe widths are a proxy for area. However, the islands need not have samelengths, shapes or sizes. A total island area may be about 40% to about75% of the total drift region area.

FIG. 2B shows checkered pattern islands 203 and 205 as another example.The islands 203 are again larger than islands 205 (width 221 is largerthan width 223), but not all of the gate structure edge overlaps anisland 203. This design may be used to smooth the surface electricfield. A ratio of an island and adjacent drift region (such as 221/222or 223/222) that is not occupied by an island may be about 3:1 to about1:3. Thus, the checkers need not be the same size. As shown in FIG. 2B,the ratio is about 1:1.

FIG. 2C shows trapezoidal islands 203 and 205 as another example. Thetrapezoidal islands 203 and 205 have a shorter width, such as width 220,and a longer width, such as width 221. The gate structure edge overlapsa portion of the trapezoidal island 203.

FIG. 2D shows an irregular island distribution. The various islands 229and 231 are all differently shaped and may be irregularly shaped. Inthis example the overall island area, shown as cross hatched regions, iscompared to the total drift region area. A total island area may beabout 40% to about 75% of the total drift region area. Anothercomparison is the total island area, shown as cross hatched regions, tothe drift region that is not occupied by an island, shown as hatchedregions. This ratio may be about 30% to about 300%.

FIG. 2E shows yet another example where the islands 203 and 205 havedifferent shapes. Island 203 adjoins the gate structure 219 withoutoverlapping each other. In other words, no part of island 203 is under aportion of the gate structure 219. Islands 203 and 205 are locatedwithin drift region 207, which starts at the gate structure edge. Withnon-overlapping embodiments, the width 221 of the adjoining island 203may be larger to have the same effect as the “disposed under” island 203of FIGS. 2A to 2D.

The various islands shown in FIGS. 2A to 2D are merely examples. Theislands may be polygons, such as quadrilaterals such as those in FIGS.2A, 2B, and 2C. The islands may have more than four sides or may becircular or irregular, such as those in FIG. 2D.

FIGS. 3A to 3C are cross-sectional views of a HEMT structure anddepletion regions formed during various operations for an III-Vsemiconductor material based transistor without the islands of thepresent disclosure. FIG. 3A shows a small depletion region 301 under thegate structure 311 when the gate voltage is greater than the thresholdvoltage (a negative value), with no bias applied to the drain 313. Thedevice of FIG. 3A is in an on state (normally on) and a current flowsalong the 2-DEG carrier channel 315.

In FIG. 3B, a gate voltage less than the threshold voltage is applied,with no bias at the drain 313, such that a larger depletion region 303is formed. The depletion region 303 crosses the 2-DEG carrier channelboundary so that no current flows through the 2-DEG carrier channel 315.The device of FIG. 3B is in an off state.

FIG. 3C shows a device with a gate voltage less than the thresholdvoltage and bias at the drain so that the drain voltage is greater thanzero. A much larger depletion region 305 is formed, the size of whichcorrespond to the bias at the drain 313. When the drain 313 bias issufficiently large, for example, larger than the breakdown voltage ofthe device, a large enough electric field is formed that is greater thana critical electrical field (Ec) of the material, either the bulk layer317 or the donor-supply layer 319. The device can breakdown or pop andbe rendered inoperable.

FIGS. 4A to 4C are cross-sectional views of a HEMT structure anddepletion regions formed during various operations for an III-Vsemiconductor material based transistor with the islands of the presentdisclosure. FIG. 4A shows a small depletion region 401 under the gatestructure 411 when the gate voltage is greater than the thresholdvoltage (a negative value), with no bias applied to the drain 413. Smalldepletion regions 402 are also shown under the islands 421. Note thatthe depletion region 401 under the gate 411 incorporates the effect ofisland 423. The device of FIG. 4A is in an on state (normally on) and acurrent flows along the 2-DEG carrier channel 415 because none of thedepletion regions 401 and 402 crosses the 2-DEG carrier channel 415.

In FIG. 4A, a gate voltage less than the threshold voltage is applied,with no bias at the drain 313, such that a larger depletion region 403and smaller depletion regions 402 are formed. The depletion region 403cross the 2-DEG carrier channel boundary so that no current flowsthrough the 2-DEG carrier channel 415. The device of FIG. 4B is in anoff state.

FIG. 4C shows a device with a gate voltage less than the thresholdvoltage and bias at the drain so that the drain voltage is greater thanzero. A much larger depletion region 405 is formed combining the smallerdepletion regions under the islands 421. The size of depletion region405 corresponds to the bias at the drain 413. For the same bias at thedrain 413, the maximum depth of the depletion region 405 is smaller thanthat of depletion region 305 from FIG. 3C because the depletion region405 is more distributed across the drift region.

FIG. 5 is a plot of simulated peak surface electric field as a functionof distance on the HEMT structures in accordance with variousembodiments of the present disclosure. Electric field in volts percentimeter is plotted against a distance along line across the HEMT. Thesimulation models a gate voltage of −5 volts and drain bias of 600volts. The peak corresponds to the gate structure edge closest to thedrain. Line 501 is a simulated result for a HEMT without the islands asdisclosed herein. The peak electric field for line 501 is about 6E6V/cm. Line 503 is a simulated result for a HEMT having three islandsbetween the gate structure and the drain. The peak electric field forline 503 is about 5E6 V/cm, for a reduction of about 20%. This simulatedresult shows that the island structures disclosed herein do indeedreduce peak surface electric field in the HEMT. While the peak electricfield value would vary depending on the structure modeled in thesimulation, the relative effect of the islands is clear.

The embodiments of the present disclosure may have other variations. Forexample, the islands may include more than one material, such as a layerof nickel oxide over a layer of gallium nitride. Certain embodiments ofthe present disclosure have several advantageous features. The use ofvarious doping species allows fine-tuning of the islands, and hence thebreakdown voltage, while minimizing adverse effects to other electricalproperties, such as maximum forward current or leakage current.

Once aspect of this description relates to a method of making a circuitstructure. The method includes growing a bulk layer over a substrate,and growing a donor-supply layer over the bulk layer. The method furtherincludes depositing a doped layer over the donor-supply layer, andpatterning the doped layer to form a plurality of islands. The methodfurther includes forming a gate structure over the donor-supply layer,wherein the gate structure is partially over a largest island of theplurality of islands. The method further includes forming a drain overthe donor-supply layer, wherein at least one island of the plurality ofislands is between the gate structure and the drain.

Another aspect of this description relates to a method of making acircuit structure. The method includes growing a III-V compound layerover a substrate, and growing a donor-supply layer over the III-Vcompound layer. The method further includes forming a plurality ofp-doped islands over the donor-supply layer. The method further includesforming a gate structure over the donor-supply layer, wherein anentirety of a bottom surface of the gate structure is below a topsurface of each p-doped island of the plurality of p-doped islands, andthe gate structure adjoins at least one p-doped island of the pluralityof p-doped islands. The method further includes forming a drain over thedonor-supply layer, wherein each of the plurality of islands is betweenthe drain and the gate structure, and a drift region of the donor-supplylayer occupies at least 50% of the donor-supply layer.

Still another aspect of this description relates to a circuit structure.The circuit structure includes a substrate, and an unintentionally doped(UID) III-V compound layer over the substrate. The circuit structurefurther includes an active layer over the UID III-V compound layer, anda plurality of doped islands over the active layer. The circuitstructure further includes a gate structure and a drain over the activelayer. At least one doped island of the plurality of doped islands isbetween the gate structure and the drain. A first portion of the gatestructure is separated from the active layer by a doped island of theplurality of doped islands. A second portion the gate structurescontacts the active layer, and the first portion is spaced from thesecond portion in a direction perpendicular to a direction from the gatestructure to the drain.

Although the present disclosure and its advantages have been describedin detail, it should be understood that various changes, substitutionsand alterations can be made herein without departing from the spirit andscope of the disclosure as defined by the appended claims. Moreover, thescope of the present application is not intended to be limited to theparticular embodiments of the process, machine, manufacture, andcomposition of matter, means, methods and steps described in thespecification. As one of ordinary skill in the art will readilyappreciate from the present disclosure, processes, machines,manufacture, compositions of matter, means, methods, or steps thatperform substantially the same function or achieve substantially thesame result as the corresponding embodiments described herein may beutilized according to the present disclosure. Accordingly, the appendedclaims are intended to include within their scope such processes,machines, manufacture, compositions of matter, means, methods, or steps.

1. A circuit structure comprising: a substrate; a III-V compound layerover the substrate; an active layer over the III-V compound layer; aplurality of doped islands over the active layer; and a gate structureand a drain over the active layer, wherein at least one doped island ofthe plurality of doped islands is between the gate structure and thedrain, a first portion of the gate structure is separated from theactive layer by a doped island of the plurality of doped islands, asecond portion the gate structures contacts the active layer, and thefirst portion is spaced from the second portion in a directionperpendicular to a direction from the gate structure to the drain. 2.The circuit structure of claim 1, wherein the gate structure contacts asurface of the active layer between adjacent doped islands of theplurality of doped islands.
 3. The circuit structure of claim 1, furthercomprising a source over the active layer, wherein a space between thegate structure and the source is free of the plurality of doped islands.4. The circuit structure of claim 1, wherein the doped island is apolygon-shape having at least four sides.
 5. The circuit structure ofclaim 1, wherein the doped island is a first doped island of theplurality of doped islands and the plurality of doped islands furtherincludes a second doped island between the drain and the gate structure,the first and second doped islands being different in at least one ofshape and size.
 6. The circuit structure of claim 5, wherein the firstdoped island is larger than the second doped island.
 7. A semiconductordevice structure, the structure comprising: a III-V compound layer overa substrate; an active layer over the III-V compound layer; a source anda drain over the active layer; a plurality of polygon shaped islandsdisposed over the active layer and interposing the gate and the drain; agate structure over the active layer, wherein a first portion of thegate structure directly interfaces a first island of the plurality ofislands and a second portion of the gate structure directly interfacesthe active layer; and wherein the first island of the plurality ofislands is a polygon having four or more sides.
 8. The structure ofclaim 7, wherein the first portion of the gate structure that directlyinterfaces the first island is a sidewall of the gate structure.
 9. Thestructure of claim 7, wherein the first portion of the gate is disposedon a top surface of the first island and is separated from the activelayer by the first island.
 10. The structure of claim 7, wherein theplurality of polygon shaped islands includes a second island, whereinthe second island is smaller than the first island.
 11. The structure ofclaim 10, wherein the second island is a different shape than the firstisland.
 12. The structure of claim 7, wherein the plurality of polygonshaped islands are a p-doped material.
 13. The structure of claim 7,wherein the plurality of polygon shaped islands are disposed directly onthe active layer.
 14. The structure of claim 7, wherein the plurality ofpolygon shaped islands are configured in a checker-board shape.
 15. Acircuit structure, the structure comprising: a bulk layer over asubstrate; a donor-supply layer over the bulk layer; a plurality ofislands disposed over the donor-supply layer; a gate structure over thedonor-supply layer, wherein the gate structure is at least partiallyover a first island of the plurality of islands; and a drain over thedonor-supply layer, wherein a second island of the plurality of islandsis between the gate structure and the drain, the second island beingsmaller than the first island.
 16. The circuit structure of claim 15,wherein the first island is a largest island of the plurality ofislands.
 17. The circuit structure of claim 15, wherein the first andsecond islands have a same shape.
 18. The circuit structure of claim 15,further comprising a third island between the gate structure and thedrain, wherein the first island is larger than the second island, andthe second island is larger than the third island.
 19. The circuitstructure of claim 15, wherein the plurality of islands includes GaNmaterial doped with a p-type dopant.
 20. The circuit structure of claim19, wherein the bulk layer includes GaN and the donor-supply layerincludes AlGaN.